保有技術（技術論文）

Silicon Technology

 

  1. Ikuo Kurachi, T. Yanai, K. Anraku, and K. Yoshioka, “Breakdown Characteristics of Double Poly-Si Structure for DRAMs with SiN/SiO2 Capacitor Dielectric,” Proc. of Int. Conf. on Semiconductor and Integrated Circuit Technology (Beijin), 1986.
  2. Ikuo Kurachi and Kentaro Yoshioka, “Breakdown Characteristics of MOS Tungsten Polycide Gate Structure,” Proc. of Electronic Devices and Materials Symposium (Kaohsing), pp. 133-138, 1988.
  3. Ikuo Kurachi, Tetsuro Yanai, and Kentaro Yoshioka, “Oxide Reliability in Tungsten Polycide Gate Structure,” IEEE VLSI Multilevel Interconnection Conference (VMIC), p505, 1989.
  4. Nam Hwang, S.S.B. Or, Ikuo Kurachi, and Leonard Forbes, “Tunneling and Thermal Emission of Electrons at Room Temperature and Above from a Distribution of Deep Traps in SiO2,” Proc. Int. Elect. Devices and Materials Symp.(Taiwan), pp.559-562, 1992.
  5. Ikuo Kurachi, Yasuhiro Fukuda, Naoki Miura, and Fumio Ichikawa, “Analysis of Soft Breakdown Failure with ESD on Output Buffer nMOSFETs and Its Improvement,” IEEE Industry Application Society Annual Meeting, 1992.
  6. Ikuo Kurachi, Nam Hwang, and Leonard Forbes, “Lifetime Prediction Model for Analog Devices based on Drain Conductance Degradation due to Hot Carrier Injection,” Proc. of International Workshop on VLSI Process and Device Modeling(1993VPAD), pp130-131, 1993.
  7. Ikuo Kurahi, Nam Hwang, and Leonard Forbes, “Physical Model of Drain Conductance (gd) Degradation due to Hot Carrier Injection,” IEEE Trans. on Electron Devices, Vol.41, pp.964-969, 1994.
  8. Ikuo Kurachi, Yasuhiro Fukuda, Naoki Miura, and Fumio Ichikawa, “Analysis of Soft Breakdon Failure with ESD on Output Buffer nMOSFETs and Its Improvement,” IEEE Trans. on Industry Applications, Vol 30, No. 2, pp. 358-364, 1994.
  9. Ikuo Kurachi and Yasuhiro Fukuda, “Improvement of “Soft Breakdown” Leakage of off-state nMOSFETs Induced by HBM ESD Events Using Drain Engineering for LDD Structure,” IEICE Trans. on Fundamentals of Electronics, Communications and Computer, Vol. E77-A, No.1, pp166-173, 1994.
  10. Ikuo Kurachi, Kelvin T. Yan, and Leonard Forbes, “Reliability Considerations of Hot Carrier Induced Degradation in Analogue nMOSFET Amplifier,” IEE Electronics Lett. Vol.30, No.19, pp1568-1570, 1994.
  11. S. Sekiyama, Y. Motoyama, K. Iwasaki, Y. Tamiya, Y. Motokawa, N. Kuriyama, M. Fujimoto, and I. Kurachi, “The Investigation for Indroduction of SAC Etching Tecgnolgy to Mass Production DRAM Process,” IEEE Int. Symp. On Semiconductor Manuf. Conf. Proc., F-17, 1997.
  12. Ikuo Kurachi, “Advanced Characterization Method for Sub-micron DRAM Cell Transistors,” Proc. IEEE 1998 Int. Conference on Mecroelectronic Test Structure, Vol. 11, pp.89-93, 1998.
  13. Ikuo Kurachi, “Advanced Characterization Method for Sub-Micron DRAM Cell Transistors,” IEICE Trans. on Electronics, Vol.E82-C, No.4, pp618-623, 1999
  14. A. Yabata, O. Koike, J. Hashimoto, and I. Kurachi, “New Mechanism of LER Formation in Gate Process,” IEEE Int. Symp. On Semiconductor Manuf. Conf. Proc., pp.99-102, 2006.
  15. Takeshi Ohmori, Takeshi K. Goto, Takeshi Kitajima, Toshiaki Makabe, Seiji Samukawa, and Ikuo Kurachi, “In-situ Measurement of an Accumulation and Reduction of Bottom Charging on SiO2 Contact Hole with a High Aspect Ratio in a Pulsed 2f-CCP in Ar and CF4/Ar,” Proc. of 59th Annual Gassous Electronics Conference of the American Physical Society, VF1.00003, 2006.
  16. J. Hashimoto, A. Yabata, T. Tatsumi, S. Kawada, I. Kurachi, Y. Ishikawa, and S. Samukawa, “On-wafer Real Time Monitoring of Charge-Build-up Voltages during Plasma Etching in Production Equipment,” American Vacuum Society 54th International Symp., 2007.
  17. J. Hashimoto, T. Tatsumi, S. Kawada, M. Kuriyama, I. Kurachi, Y. Ishikawa and S. Samukawa, “Time Dependence of Charge-Build-up Voltages in Production Etcher by On-wafer Real Time Monitoring System,” American Vacuum Society 55th International Symp., 2008.
  18. I. Kurachi, “Review of FD-SOI Technology and its Application to X-ray Pixel Sensors,” VIPS2010 Workshop on Vertically Integrated Pixel Sensors, 2010.
  19. K. Nishi, M. Mochizuki, H. Hayashi, K. Fukuda, and I. Kurachi, "Proposal of a point-source model for highly-accurate analytical 3D calculation of ion implanted dopant profiles,” SISPAD, pp.193-196, 2010.
  20. I. Kurachi, “OKI Semiconductor FD-SOI Technology for Pixel Detector Application,” 2nd Asian Accelerator Workshop, JAAWS, Puhang, Korea, 2010.
  21. K. Hara, M. Kochiyama, K. Koike, T. Sega, K. Shinsho, Y. Arai, Y. Fujita, R. Ichimiya, Y. Ikegami, Y. Ikemoto, T. Kohriki, T. Miyoshi, K. Tauchi, S. Terada, T. Tsuboyama, Y. Unno, Y. Horii, Y. Onuki, D. Nio, A. Takeda, K. Hanagaki, J. Uchida, T. Tsuru, S. G. Ryu, I. Kurachi, H. Kasai, N. Kuriyama, N. Miura, M. Okihara, and M. Motoyoshi, “Development of INTPIX and CNPIX Silicon-On-Insulator Monolithic Pixel Deveices,” Proceedings of Science (VERTX2010 003 ), 2010.
  22. M. Mochizuki, H. Hayashi, S. Ishii, S. Ohira, I. Kurachi, and N. Miura, “Accurate and global model of SOI H gate body-tied MOSFET for circuit simulator,” SISPAD, pp.247-250, 2011.
  23. V. Axelrad, H. Hayashi, and I. Kurachi, “Physical Circuit-Device Simulation of ESD and Power Devices,” SISPAD, pp.175-178, 2011.
  24. Ikuo Kurachi and Kentaro Yoshioka, “INVESTIGATION OF BORON SOLID-PHASE DIFFUSION FROM BSG FILM DEPOSITED BY AP-CVD FOR SOLAR CELL APPLICATION,” 27th European Photovoltaic Solar Energy Conference, pp.1837-1876, 2012.
  25. Ikuo Kurachi and Kentaro Yoshioka, “AN ACCURATE ANALYTICAL MODEL OF BORON DIFFUSION FROM AP-CVD BSG FOR SOLAR CELL PROCESS OPTIMIZATION,” 28th European Photovoltaic Solar Energy Conference, pp.1085-1089, 2013.
  26. Ikuo Kurachi and Kentaro Yoshioka, “Enhancement and retardation of thermally boron diffusion in silicon from atmospheric pressure chemical vapor deposited boron silicate glass film,” Jap. J. Appl. Phys. 53 p.036504, 2014.
  27. R. Shirota, B-J.Yang, Y-Y. Chui, H-T. Cheng, S-F Ng, P-Y. Wang, J-H. Chang, and I. Kurachi, “New Accurate Method to Analyze both Floating gate Charge and Tunnel Oxide Trapped Charge Profile in NAND Flash Memory,” International Memory Workshop (Taipei), pp.1-4, 2014.
  28. Ikuo Kurachi and Kentaro Yoshioka, “BORON DIFFUSION PROFILE ESTIMATION USING MEASURED SHEET RESISTANCE FOR T-CAD SOLAR CELL SIMULATION,” 29th European Photovoltaic Solar Energy Conference, pp. 855-858, 2014.
  29. Akira Harada, kyotaro Nakamura, Ikuo Kurachi, Kentaro Yoshioka, Norihiro Ikeno, and Atsushi Ogura “Emitter layer design by thermal diffusion process for N-type crystalline silicon solar cells,” 29th European Photovoltaic Solar Energy Conference, pp. 900-903, 2014.
  30. Hiroshi Watanabe, Andy Lee, and Ikuo Kurachi “On Exotic Nanostructure for bio-FET,” International Conference and Exhibition on Biosensors & Bioelectronics, pp. , 2014.
  31. Ikuo Kurahci, Hiroshi Takano, and Hisashi Kanie “Study of Oxide-Silicon Interface State Generation and Annihilation by Rapid Thermal Processing,” Jpn. J. Appl. Phys., vol. 54, p. 086501, 2015.
  32. Riichiro Shirota, Bo-Jun.Yang, Yung-Yueh Chui, Hsuan-Tse Cheng, Seng-Fei Ng, Pin-Yao Wang, Jung-Ho Chang, and Ikuo Kurachi, “New Method to Analyze the Shift of Floating Gate Charge and Generated Tunnel Oxide Trapped Charge Profile in NAND Flash memory by Program/Erase Endurance,” IEEE Trans. on　Electron Dev. 62, NO.1, pp. 114-120., 2015.
  33. Ikuo Kurachi, Kazuo Kobayashi, Masao Okihara, Takaki Hatsui, Kazuhiko Hara, and Yasuo Arai, “Radiation Damage Evaluation of FD-SOI MOSFETs for X-ray Image Sensor Application,” 6th Asian Forum for Accelerators and Detectors (AFAD 2015) Hsinchu, p.29, 2015.
  34. Riichiro Shirota, B.-J. Yang, Y.-Y. Chiu, Y.-T. Wu, P.-Y. Wang, J.-H. Chang, M. Yano, M. Aoki, T. Takeshita, C.-Y. Wang, and Ikuo Kurachi, “Improvement of Oxide Reliability in NAND Flash Memories Using Tight Endurance Cycling with Shorter Idling Period,” IEEE Proc. International Reliability Physics Symp., p. MY. 12, 2015.
  35. Ikuo Kurachi, Kazuo Kobayashi, Masao Okihara, Hiroki Kasai, Takaki Hatsui, Kazuhiko Hara, Toshinobu Miyoshi, and Yasuo Arai, “Analysis of Effective Gate Length Modulation by X-ray Irradiation for Fully-Depleted SOI p-MOSFETs,” IEEE Trans. on Electron Dev. vol. 62, no. 8, pp. 2371-2376, Aug. 2015.
  36. Ikuo Kurachi and Kentaro Yoshioka, “Analytical boron diffusivity model in silicon for thermal diffusion from boron silicate glass film,” Jpn. J. Appl. Phys., vol. 54, p.096502, 2015.
  37. Ikuo Kurachi, Kazuo Kobayashi, Hiroki Kasai,　Marie Mochizuki, Masao Okihara, Takaki Hatsui, Kazuhiko Hara, and Yasuo Arai, “X-ray Radiation Hardness of Fully-Depleted SOI MOSFETs and Its Improvement,” in Proc. of SOIPIX2015, arXiv:1506.08510v1.
  38. Miho Yamada, Yasuo Arai, and Ikuo Kurachi, “Compensation of radiation damage for SOI pixel detector,” in Proc. of SOIPIX2015, arXiv:1507.02797v1.
  39. Mari Asano, Kazuhiko Hara, Daisuke Sekigawa, Shunsuke Honda, Naoshi Tobita, Yasuo Arai, Toshinobu Miyoshi, and Ikuo Kurachi, “Characteristics of Non-Irradiated and Irradiated Double SOI Integration Type Sensor,” in Proc. of SOIPIX2015
  40. Naoshi Tobita, Shunsuke Honda, Kazuhiko Hara, Wataru Aoyagi, Yasuo Arai, Toshinobu Miyoshi, Ikuo Kurachi, Takaki Hatsui, Togo Kudo, and Kazuo kobayashi, “Compensation for TID Damage in SOI Pixel Devices,” in Proc. of SOIPIX2015, arXiv.
  41. Akihiko Koyama, Kenji Shimazoe, Hiroyuki Takahashi, Tadashi Orita, Yasuo Arai, Ikuo Kurachi, Toshinobu Miyoshi, Daisuke Nio, and Ryutaro Hamasaki, “Development of the Pixlated Photon Detector Using Silicon on Insulator Technology for TOF-PET,” in Proc. of SOIPIX2015, arXiv.
  42. Ikuo Kurachi, Kazuo Kobayashi, Marie Mochizuki, Masao Okihara, Hiroki Kasai, Takaki Hatsui, Kazuhiko Hara, Toshinobu Miyoshi, and Yasuo Arai, “Tradeoff Between Low-Power Operation and Radiation Hardness of Fully Depleted SOI pMOSFET by Changing LDD Conditions,” IEEE Trans. on Electron Dev. vol. 63, no. 6, pp. 2293-2298, Jun. 2016.
  43. Ikuo Kurachi and Kentaro Yoshioka, “Investigation of Boron Thermal Diffusion from Atmospheric Pressure Chemical Vapor Deposited Boron Silicate Glass for N-Type Solar Cell Process Application,” Int. Jour. of Photoenergy, vil. 2016, Article ID 8183673.
  44. Yasuo Arai and Ikuo Kurachi, “Radiation Imaging Detectors Using SOI Technology,” Morgan & Claypool, 2017.
  45. Yasuo Arai, Toshinobu Miyoshi, and Ikuo Kurachi, “SOI monolithic pixel technology for radiation image sensor,” IEDM 2017.
  46. Sumeet Shrestha, Shoji Kawahito, Hiroki Kamehama, Syunta Nakanishi, Keita Yasutomi, Keiichiro Kagawa, Nobukazu Teranishi, Ayaki Takeda, Takeshi Go Tsuru, Ikuo Kurachi, Yasuo Arai, “A Silicon-on-Insulator-Baseed Dual-Gain Charge-sensitive Pixel Detector for Low-Noise X-ray Imaging for Future Astronomical Satellite Missions,” Sensors vol. 18, No. 6, pp. 1789-, 2018.
  47. Ikuo Kurachi, Kazuo Kobayashi, Masao Okihara, Hiroki Kasai, Kazuhiko Hara, Toshinobu Miyoshi, Yasuo Arai, “Investigation of radiation hardness improvement by applying back-gate bias for FD-SOI MOSFETs,” Nucl. Inst. Meth. A, 2018. In press.
  48. I. Kurachi, T. Tsuboyama, Y. Arai, and M. Motoyoshi, “Application of Three Dimensional Chip Stacking Technology for Fully Depleted Silicon-on-Insulator Quantum Beam Imager,” ECS Transactions, 92(5) pp. 29-38, 2019.